M Ezzldeen, Jing Wang, Mussaab I. Niass, Yatao Zhang (2026). Fabrication of Porous PVDF/Kenaf Fiber Membranes. ChemRxiv

Mussaab I. Niass, Hameed ur Rehman, Mohammed S. M. Gismalla, Fang Wang, Wengang Bi and Yuhuai Liu (2026). Impact of bowing parameter on the performance of BGaN/BGaN active layers in edge emitting laser diodes. IOPScience Physica Scripta

Mussaab I. Niass, Hameed U. Rehman, Mohamed S. M. Gismalla, F. Wang, Yuhuai Liu (2026). Optimization of Mirror Reflectivity and Optical Loss in AlGaN/BGaN Blue Edge Emitting Laser Diodes. ChemRxiv

Mussaab I. Niass, H. U. Rehman, Muhammad Nauman, M. S. M. Gismalla, Yuhuai Liu F. Wang, and Wengang Bi, (2026). Characterization of Non-Radiative Recombination Mechanisms in Boron Gallium Nitride Edge Emitting Laser Diodes. ChemRxiv

Muhammad Nauman , Hameed Ur Rehman, Naveed Ur Rahman, Mussaab I. Niass , Wengang Bi, Fang Wang, Yuhuai Liu (2026). Optimizing hole transport with P-type BGaN for 266.1 nm Deep-UV laser diodes. Micro and Nanostructures

Khan Sajid Ullah, Mussaab Ibrahim Niass, Aoxiang Zhang, Fang Wang, Juin J. Liou, and Yuhuai Liu, (2023). Performance enhancement of an AlGaN-based deep-ultraviolet laser diode using a two-stepped doped lower waveguide. Journal of Optical Technology

Rehman Hameed Ur, Mussaab I. Niass, Fang Wang, and Yuhuai Liu, (2023). Performance analysis for 263 nm AlGaN DUV EELD by diferent EBL techniques. Optik 281

Khan Sajid Ullah, SharifMuhammad Nawaz, Mussaab Ibrahim Niass, FangWang, and Yuhuai Liu, (2022). Efects of the stepped-doped lower waveguide and a doped p-cladding layer on AlGaN-based deep-ultraviolet laser diodes. Journal of Russian Laser Research

Khan Sajid Ullah, Wang Yao, Zhang Aoxiang, Sharif Muhammad Nawaz, Mussaab Ibrahim Niass, Fang Wang, and Yuhuai Liu, (2022). AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers,. Journal of Russian Laser Research

Mussaab I. NIASS, Fang WANG, Yuhuai LIU (2022). A design and Comparative Investigation of Graded AlxGa1-xN EBL for WB0.375GaN/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate. Chinese Journal of Electronics

Sharif, Muhammad Nawaz, Mussaab Ibrahim Niass, Juin J. Liou, Fang Wang, and Yuhuai Liu, (2021). P-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode. Superlattices and Microstructures

Sharif M.N., Usman M., Niass M.I., Liou J.J., Wang F., and Liu Y. (2021). Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer. Nanotechnology

Khan, Sajid Ullah, Muhammad Nawaz Sharif, Mussaab Ibrahim Niass, Mehtab Afzal, and Muhammad Shoaib (2021). Comparison of multiple deep models on semantic segmentation for breast tumor detection,. Foundation University Journal of Engineering and Applied Sciences

Sharif Muhammad Nawaz, Mussaab I. Niass, Juin J. Liou, Fang Wang, and Yuhuai Liu, (2021). The efects of AlGaN quantum barriers on carriers fow in deep ultraviolet nanowire laser diode. Semiconductor Science and Technology

Mussaab I. Niass, M. N. Sharif, Y. Wang, F. Wang, and Y. Liu, (2021). Deep Ultraviolet Edge Emitting Laser Diode Using Novel Boron Gallium Nitride over Sapphire Substrate: Simulation Study,. 2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semicon- ductors (SSLChina: IFWS)

Wang, Yi-Fu, Mussaab I. Niass, Fang Wang, and Yu-Huai Liu (2020). "Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer. Chinese Physics B

Gismalla, Mohammed S. M., Mohammad F. L. Abdullah, Mussaab I. Niass, Bhagwan Das, and Waf A. Mabrouk (2020). Improve uniformity for an indoor visible light communication system. International Journal of Communication Systems

Nawaz Sharif Muhammad, Mussaab I. Niass, Yifu Wang, Zhongqiu Xing, Fang Wang, and Yuhuai Liu (2020). Enhancement of the optoelectronic characteristics of deep ultraviolet nanowire laser diodes by induction of bulk polarization charge with graded AlN composition in AlxGa1-xN waveguide. Superlattices and Microstructures

Zhong-qiu Xing, Yong-jie Zhou, Xue Chen, Mussaab I. Niass, Yi-fu Wang, Fang Wang, and Yu-huai Liu (2020). Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells. Optoelectron. Lett.

Wang, Yifu, Hangyu Wang, Mussaab I. Niass, Fang Wang, and Yuhuai Liu (2019). Increased Radiative Re- combination in Nitride Laser Diodes with Inverse Tapered Electron Blocking Layer. IEEE 2nd International Conference on Electronics Technology (ICET),

Gismalla, M. S. M., M. F. L. Abdullah, Waf A. Mabrouk, B. Das, and Mussaab I. Niass, (2019). Data rate and BER analysis for optical attocells confguration model in visible light communication. International Conference on Information Science and Communication Technology (ICISCT)

Q. Huo, Mussaab I. Niass, Y. Liu, and F. Wang, (2019). Improve the performance of deep ultraviolet semi- conductor lasers by optimizing the electron blocking layer. 8th International Symposium on Next Generation Electronics (ISNE)

Lu Zheng Qian, Yi Pu Qu, Mussaab I. Niass, Muhammad Nawaz Sharif, Yu Huai Liu, and Fang Wang (2019). Efect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals. Materials Science Forum

Yi-Fu Wang, Mussaab I. Niass, Fang Wang, and Yu-Huai Liu, (2019). Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer. Chin. Phys. Lett.

Mussaab I. Niass, M.N.S., Y F Wang, Z Q Lu, X Chen, Y P Qu, Z Q Du, F Wang, and Y H Liu, (2019). A con- trivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1-xN heterojunction grown on AlN substrate. Journal of Semiconductor

Mussaab I. Niass, J.Z., Zheng Qian Lu, Zhongqiu Du, Xue Chen, Yipu Qu, Fang Wang, and Yuhuai Liu (2019). Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD. Journal of Crystal Growth

Wang Yifu, Mussaab I. Niass, Yuhuai Liu, and Wang Fang (2018). Design of 280nm deep ultraviolet high performance laser based on sapphire substrate. The second National Symposium on new semiconductor power devices and application technology